Modeling and Experimental Examination of the Solonitsyn Memory Effect on the Surface of Wide Band Gap Metal Oxides

Modeling and Experimental Examination of the Solonitsyn Memory Effect on the Surface of Wide Band Gap Metal Oxides Научная публикация

Журнал

The Journal of Physical Chemistry B
ISSN: 1520-6106 , E-ISSN: 1520-5207

Вых. Данные

Год: 2004, Том: 108, Номер: 7, Страницы: 2354-2361 Страниц : DOI: 10.1021/jp0310044

Авторы

Polikhova S. A. ¹ , Andreev N. S. ¹ , Emeline A. V. ¹ , Ryabchuk V. K. ¹ , Serpone N. ¹

Организации

Department of Photonics, Institute of Physics, St. Petersburg State University, St. Petersburg, Russia, Department of Chemistry & Biochemistry, Concordia University, 7141 Sherbrooke Street West, Montreal, Quebec, Canada H4B-1R6, and Dipartimento di Chimica Organica, Universita di Pavia, Via Taramelli 10, 27100 Pavia, Italy

Polikhova S.A. , Andreev N.S. , Emeline A.V. , Ryabchuk V.K. , Serpone N.
Modeling and Experimental Examination of the Solonitsyn Memory Effect on the Surface of Wide Band Gap Metal Oxides
The Journal of Physical Chemistry B. 2004. V.108. N7. P.2354-2361. DOI: 10.1021/jp0310044 Scopus OpenAlex

Scopus:	2-s2.0-1342267068
OpenAlex:	W2041244868

БД	Цитирований
OpenAlex	8
Scopus	8