Influence of interfacial modification by metallic oxide layer in organic resistive memory device Доклады на конференциях
| Язык | Английский | ||
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| Тип доклада | Стендовый | ||
| Конференция |
The 3rd Asian Symposium on Advanced Materials: Chemistry & Physics of Functional Materials 19-22 сент. 2011 , Fukuoka |
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Реферат:
Poster Presentation 2P43
Библиографическая ссылка:
Kimura M.
Influence of interfacial modification by metallic oxide layer in organic resistive memory device
The 3rd Asian Symposium on Advanced Materials: Chemistry & Physics of Functional Materials 19-22 Sep 2011
Influence of interfacial modification by metallic oxide layer in organic resistive memory device
The 3rd Asian Symposium on Advanced Materials: Chemistry & Physics of Functional Materials 19-22 Sep 2011